iBeam to present invited talk at Photonics West Conference
“GaN-on-IBAD technology for microLED displays”
presentation streams starting Mar 6
SANTA FE, NM, Mar 6, 2021 – iBeam Materials, Inc. (“iBeam”) announces a presentation entitled “GaN-on-IBAD technology for MicroLED Displays” at Photonics West 2021, organized by SPIE, the international society for optics and photonics. Normally held each year in San Francisco, this year the Photonics West Conference will be online only as a digital forum. Vladimir Matias, founder and president of iBeam, is giving an invited talk as part of the Conference session 11706 entitled “Light-Emitting Devices, Materials, and Applications XXV” and he will describe the new paradigm iBeam has developed for manufacturing epitaxial GaN films and devices on low-cost, large-area substrates, especially as they relate to emerging microLED technology for displays. The presentation is available as an on-demand streaming video for conference registrants.
Dr. Vladimir Matias will describe the unique process for depositing epitaxial GaN films directly on unaligned substrates such as low-cost metal foil or glass, rather than industry-standard crystalline wafers. This process includes an ion-beam assisted deposition (IBAD) process for biaxially aligned films as a template for epitaxy. The epitaxial GaN films on IBAD/ polycrystalline metal foil are then used as a template to deposit high-quality LED and transistor structures. These can be integrated monolithically over large areas to make tough, bendable active-matrix displays using microLEDs whose sizes can be designed for optimum performance at no additional cost, unlike mass-transfer approaches.
Dr. Matias will describe how these products can be manufactured using scalable, high-throughput roll-to-roll processes, and how new flexible form factors and forward-looking applications of LEDs are enabled. Register at spie.org.
About iBeam Materials
iBeam Materials is disrupting the display, lighting and wearable electronics industries by creating new game-changing product categories based on epitaxial GaN (Gallium Nitride) devices grown on non-single crystal substrates (GANOX). Located in Santa Fe, NM, and founded in 2011, iBeam is a spin-out from Los Alamos National Laboratory. iBeam has collaborated with Sandia National Labs and the University of New Mexico under a DOE ARPA-E Project to demonstrate epitaxial GaN devices on non-single crystal substrates using their proprietary and patented processes.
iBeam specializes in the use of an ion-beam technology for crystal alignment of thin layers providing for high-performance low-cost semiconductor devices on a variety of large-area substrates.
For more information visit www.ibeammaterials.com.
Business and Technical Contact:
Julian Osinski, Ph.D.
VP of Product Technology
iBeam Materials, Inc.
julian@ibeammaterials.com
(505) 295-1018